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  Datasheet File OCR Text:
 SMD Type
PNP Silicon Epitaxial Transistor 2SA1330
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
Features
+0.1 2.4-0.1
High voltage.
1
+0.1 0.95-0.1 +0.1 1.9-0.1
+0.1 1.3-0.1
High DC current gain.
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -200 -200 -5 -100 200 150 -55 to +150 Unit V V V mA mW
+0.1 0.38-0.1
0-0.1
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1
SMD Type
2SA1330
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain * Base-emitter voltage * Collector-emitter saturation voltage * Base saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Fall time * Pulse test: tp 350 is; d 0.02. Symbol ICBO IEBO hFE VBE Testconditons VCB = -200V, IE=0 VEB = -5V, IC=0 VCE = -10V , IC = -10mA VCE = -10V , IC = -50mA VCE = -10V , IC = -10mA
Transistors
Min
Typ
Max -100 -100
Unit nA nA
90 50 -0.6
200 195 -0.65 -0.21 -0.8 120 3.6 0.16 1.3 0.18
450
-0.7 -0.3 -1.2
V V V MHz pF is is is
VCE(sat) IC = -50mA , IB = -5mA VBE(sat) IC = -50mA , IB = -5mA fT Cob ton tstg tf VCE = -10V , IE = 10mA VCB = -30V , IE = 0 , f = 1.0MHz IC = -10mA, IB1 = -IB2 = -1mA, VCC = -10 V VBE(off) = 2.5V
hFE Classification
Marking hFE O5 90 180 O6 135 270 O7 200 450
2
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